Background

Amorphous selenium (a-Se) has been commercialized both as an optical sensor and direct x-ray detector, and a-Se with avalanche gain has also been proposed for use in an indirect x-ray detector. Advantages include the capability for large area deposition, avalanche multiplication of holes at electric fields (ESe) greater than 70 V/um, and monotonically increasing x-ray conversion gain with ESe. However, traditional a‑Se detectors suffer from image degradation due to electronic noise, and it is extremely expensive to decrease electronic noise from readout electronics. Noise dampening also has a limited effect. Consequently, there is a need for improved methods for fabricating a-Se-containing structures that can be incorporated into systems for optical and x-ray sensing where signal amplification can be realized prior to the introduction of electronic noise.

Technology

The developed sensor has multiple layers. The first layer forms a charge blocking layer over the first substrate. It then has a layer of a‑Se over the initial blocking layer, thus forming a second charge blocking layer from the electronic noise. These layers prevent electromagnetic waves from penetrating the imaging device, creating a more stable image.

Advantages

-Higher image quality -More effective dampening range -More cost effective

Application

-Imaging stabilizing -Medical devices -Cancer research -Radiation -Therapy -Clinical